HGT1S12N60C3DS igbt equivalent, n-channel igbt.
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st.
operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182.
Featu.
Image gallery