RIC7S113L4 driver equivalent, radiation hardened high and low side gate driver.
Product Summary
n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transie.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operat.
The RIC7S113L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are c.
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