RIC7S113 Datasheet | International Rectifier

PD-97827C Radiation hardened high and low side gate driver Features - Independent high and low side gate driver - Independent bias supply for logic and power with ±5V offset - Wide bias supply voltage range - Undervoltage lockout for both channels - CMOS Schmitt trigger inputs with internal pull-down resistor - Integrated level shift for high side drive - Cycle by cycle edge triggered shutdown logic pin - Matched propagation delay for both channels - Hermetically sealed package - Lightweight - Total ionizing dose (TID) hardness o High dose rate (50-300 rad(Si)/s) of 100 krad(Si) - Single event effect (SEE) hardness o Safe operating area (SOA) defined for no SEB, SEGR up to LET of 81.9 Me V- cm2/mg o SET characterized up to LET of 81.9 Me V- cm2/mg Product summary - VOFFSET (max) = 400 V - VCC = 10 V to 20 V - VDD = 5 V to 20 V - IOUTA/B source/sink (typ) = 2 A / -2 A - ton (typ) = 120 ns - toff (typ) = 100 ns - MT (typ) = 5 ns - TJ = -55°C to 125°C Package Flatpack Potential applications - Satellite bus and payload - Power conditioning unit - Power distribution...