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RIC7S113 Key Features

  • Independent high and low side gate driver
  • Independent bias supply for logic and power with ±5V offset
  • Wide bias supply voltage range
  • Undervoltage lockout for both channels
  • CMOS Schmitt trigger inputs with internal pull-down resistor
  • Integrated level shift for high side drive
  • Cycle by cycle edge triggered shutdown logic pin
  • Matched propagation delay for both channels
  • Hermetically sealed package
  • Lightweight

Related International Rectifier Datasheets

Part Number Description
RIC7S113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7S113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7S113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7113A4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

RIC7S113 Description

It is intended for harsh radiation environments such as space, with electrical parameters specified pre and post-irradiation up to 100 krad(Si) and single effect effects (SEE) characterized up to a linear energy transfer (LET) of 81.9 MeV·cm2/mg. RIC7S113 enables high performance from key parameters. The high gate drive strength, low propagation delay and matching timing for high and low side drive help reduce loss...