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IRHN7250 - Radiation Hardened Power MOSFET

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • Light weight.
  • Surface Mount.
  • ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 200V.
  • ID : 26A.
  • RDS(on),max : 100m (100 krad(Si)).
  • QG,max : 170nC.
  • REF: MIL-PRF-19500/603 Potentia.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology PD-90679M Features • Single event effect (SEE) hardened • Low RDS(on) • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Ceramic eyelets • Light weight • Surface Mount • ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary • BVDSS: 200V • ID : 26A • RDS(on),max : 100m (100 krad(Si)) • QG,max : 170nC • REF: MIL-PRF-19500/603 Potential Applications • DC-DC converter • Motor drives SMD-1 Product Validation Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.