Datasheet4U Logo Datasheet4U.com

IRHN7130 - Radiation Hardened Power MOSFET

Datasheet Summary

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Proton tolerant.
  • Simple drive requirements.
  • Hermetically sealed.
  • Ceramic package.
  • Light weight.
  • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 100V.
  • ID : 14A.
  • RDS(on),max : 180m.
  • QG,max : 45nC Potential.

📥 Download Datasheet

Datasheet preview – IRHN7130

Datasheet Details

Part number IRHN7130
Manufacturer International Rectifier
File Size 1.14 MB
Description Radiation Hardened Power MOSFET
Datasheet download datasheet IRHN7130 Datasheet
Additional preview pages of the IRHN7130 datasheet.
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
IRHN7130 Radiation Hardened Power MOSFET Surface-Mount (SMD-1) 100V, 14A, N-channel, Rad Hard HEXFET™ Technology PD-90821D Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Proton tolerant  Simple drive requirements  Hermetically sealed  Ceramic package  Light weight  ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary  BVDSS: 100V  ID : 14A  RDS(on),max : 180m  QG,max : 45nC Potential Applications  DC-DC converter  Motor drives SMD-1 Product Validation Qualified according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications.
Published: |