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IRHN7150 - Radiation Hardened Power MOSFET

Download the IRHN7150 datasheet PDF. This datasheet also covers the IRHN3150 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • Light weight.
  • Surface Mount.
  • ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 100V.
  • ID : 34A.
  • RDS(on),max : 65m.
  • QG,max : 160nC.
  • REF: MIL-PRF-19500/603 Potential.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHN3150_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRH-12-12.5-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-24-6.3-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-5-30-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH3 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN
IRH310 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHN7130 Radiation Hardened Power MOSFET
IRHN7230 N-Channel Transistor
IRHN7250 Radiation Hardened Power MOSFET
IRHN7250SE Radiation Hardened Power MOSFET
IRHN7450 (IRHN7450 / IRHN8450) HEXFET TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRHN7150 (JANSR2N7268U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology PD-90720G Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  Light weight  Surface Mount  ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary  BVDSS: 100V  ID : 34A  RDS(on),max : 65m  QG,max : 160nC  REF: MIL-PRF-19500/603 Potential Applications  DC-DC converter  Motor drives SMD-1 Product Validation Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.