IRGP6660D-EPbF transistor equivalent, insulated gate bipolar transistor.
Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA Positive.
* Welding
* H Bridge Converters
IRGP6660DPbF IRGP6660D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast S.
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