IRGP20B120U-E - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Details

Part number	IRGP20B120U-E
Manufacturer	IRF
File Size	106.35 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP20B120U-E_IRF.pdf

UltraFast Non Punch Through (NPT) Technology.
10 µs Short Circuit capability.
Square RBSOA.
Positive VCE(on) Temperature Coefficient.
Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits.
Benchmark efficiency above 20KHz.
Optimized for Welding, UPS, and Induction Heating.

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Published: Aug 23, 2005 |