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IRGP6630D-EPbF Datasheet, International Rectifier

IRGP6630D-EPbF transistor equivalent, insulated gate bipolar transistor.

IRGP6630D-EPbF Avg. rating / M : 1.0 rating-16

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IRGP6630D-EPbF Datasheet

Features and benefits

Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) .

Application


* Welding
* H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF  TO‐247AC  C Collector GCE IRGP6630.

Image gallery

IRGP6630D-EPbF Page 1 IRGP6630D-EPbF Page 2 IRGP6630D-EPbF Page 3

TAGS

IRGP6630D-EPbF
Insulated
Gate
Bipolar
Transistor
International Rectifier

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