logo

IRGP4760-EPbF Datasheet, International Rectifier

IRGP4760-EPbF transistor equivalent, insulated gate bipolar transistor.

IRGP4760-EPbF Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 810.59KB)

IRGP4760-EPbF Datasheet
IRGP4760-EPbF
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 810.59KB)

IRGP4760-EPbF Datasheet

Features and benefits

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs complia.

Application


* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding Features Low VCE(ON) and Switching Losses 5.5.

Image gallery

IRGP4760-EPbF Page 1 IRGP4760-EPbF Page 2 IRGP4760-EPbF Page 3

TAGS

IRGP4760-EPbF
Insulated
Gate
Bipolar
Transistor
International Rectifier

Manufacturer


International Rectifier

Related datasheet

IRGP4760D-EPbF

IRGP4760DPbF

IRGP4760PbF

IRGP4740D-EPbF

IRGP4740DPbF

IRGP4750D-EPbF

IRGP4750DPbF

IRGP4790-EPbF

IRGP4790D-EPbF

IRGP4790DPbF

IRGP4790PBF

IRGP4050

IRGP4055DPBF

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts