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IRGP4750D-EPbF - Insulated Gate Bipolar Transistor

Download the IRGP4750D-EPbF datasheet PDF. This datasheet also covers the IRGP4750DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4750DPbF  TO‐247AC  C Collector E GC IRGP4750D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4750DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4750DPbF Insulated Gate Bipolar Transistor
IRGP4740D-EPbF Insulated Gate Bipolar Transistor
IRGP4740DPbF Insulated Gate Bipolar Transistor
IRGP4760-EPbF Insulated Gate Bipolar Transistor
IRGP4760D-EPbF Insulated Gate Bipolar Transistor

Full PDF Text Transcription

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  IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 35A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.
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