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IRGP4750DPbF - Insulated Gate Bipolar Transistor

Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4750DPbF  TO‐247AC  C Collector E GC IRGP4750D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of.

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Part Number Description
IRGP4750D-EPbF Insulated Gate Bipolar Transistor
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Full PDF Text Transcription

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  IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 35A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.
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