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IRGP4266DPbF Datasheet, International Rectifier

IRGP4266DPbF transistor equivalent, insulated gate bipolar transistor.

IRGP4266DPbF Avg. rating / M : 1.0 rating-15

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IRGP4266DPbF Datasheet

Features and benefits

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate .

Application


* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding Features Low VCE(ON) and Switching Losses.

Image gallery

IRGP4266DPbF Page 1 IRGP4266DPbF Page 2 IRGP4266DPbF Page 3

TAGS

IRGP4266DPbF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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