IRGP4266D-EPbF transistor equivalent, insulated gate bipolar transistor.
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient
G
E
n-channel
G Gate
.
* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding
Features Low VCE(ON) and Switching Losses.
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