Datasheet4U Logo Datasheet4U.com

IRGP4263DPbF - Insulated Gate Bipolar Transistor

Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRGP420U INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP4050 PDP Switch IRF
IRGP430U INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP440U INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4263D-EPbF Insulated Gate Bipolar Transistor
IRGP4263-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4263PBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4262D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4262DPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel G Gate GCE IRGP4263DPbF  TO‐247AC  C Collector E GC IRGP4263D‐EPbF  TO‐247AD  E Emitter Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.
Published: |