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IRGP4066DPBF Datasheet, International Rectifier

IRGP4066DPBF transistor equivalent, insulated gate bipolar transistor.

IRGP4066DPBF Avg. rating / M : 1.0 rating-11

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IRGP4066DPBF Datasheet

Features and benefits


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* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA .

Application


* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Trans.

Image gallery

IRGP4066DPBF Page 1 IRGP4066DPBF Page 2 IRGP4066DPBF Page 3

TAGS

IRGP4066DPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRGP4066D-EPBF
IRGP4066-EPBF
IRGP4066PBF
International Rectifier

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