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IRGP4063-EPBF Datasheet, International Rectifier

IRGP4063-EPBF transistor equivalent, insulated gate bipolar transistor.

IRGP4063-EPBF Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 274.11KB)

IRGP4063-EPBF Datasheet

Features and benefits


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* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA .

Application


* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged trans.

Image gallery

IRGP4063-EPBF Page 1 IRGP4063-EPBF Page 2 IRGP4063-EPBF Page 3

TAGS

IRGP4063-EPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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