IRGP4063D1-EPBF transistor equivalent, insulated gate bipolar transistor.
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5µs short circuit SOA Lead-free, RoHS compl.
and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Exce.
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