IRGP4063D1-EPBF Description
IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 48A Applica ons Industrial Motor Drive Inverters UPS Welding G E C G G n-channel G Gate C G IRGP4063D1PbF C Collector E C G E IRGP4063D1‐EPbF E Emitter.
IRGP4063D1-EPBF Applications
- V(BR)CES Collector-to-Emitter Breakdown Voltage