logo

IRGP4066D-EPBF Datasheet, International Rectifier

IRGP4066D-EPBF transistor equivalent, insulated gate bipolar transistor.

IRGP4066D-EPBF Avg. rating / M : 1.0 rating-15

datasheet Download (Size : 332.31KB)

IRGP4066D-EPBF Datasheet

Features and benefits


*
*
*
*
*
*
*
*
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA .

Application


* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Trans.

Image gallery

IRGP4066D-EPBF Page 1 IRGP4066D-EPBF Page 2 IRGP4066D-EPBF Page 3

TAGS

IRGP4066D-EPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts