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IRG7PH50UPBF Datasheet, International Rectifier

IRG7PH50UPBF transistor equivalent, insulated gate bipolar transistor.

IRG7PH50UPBF Avg. rating / M : 1.0 rating-11

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IRG7PH50UPBF Datasheet

Features and benefits


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* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the part.

Application


* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged trans.

Image gallery

IRG7PH50UPBF Page 1 IRG7PH50UPBF Page 2 IRG7PH50UPBF Page 3

TAGS

IRG7PH50UPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRG7PH50U-EP
IRG7PH50K10D-EPBF
IRG7PH50K10DPBF
International Rectifier

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