IRG7PH50K10DPBF Features
* Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH50K10DPBF IRG7PH50K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC =
IRG7PH50K10D-EPBF-InternationalRectifier.pdf
Datasheet Details
IRG7PH50K10DPBF, IRG7PH50K10D-EPBF
International Rectifier
567.79 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRG7PH50K10DPBF, IRG7PH50K10D-EPBF.
Please refer to the document for exact specifications by model.
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IRG7PH50K10DPBF Distributor
