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IRG7PH50K10D-EPBF Datasheet, International Rectifier

IRG7PH50K10D-EPBF transistor equivalent, insulated gate bipolar transistor.

IRG7PH50K10D-EPBF Avg. rating / M : 1.0 rating-12

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IRG7PH50K10D-EPBF Datasheet

Features and benefits

Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH5.

Application


* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding n-channel G Gate C G IRG7PH50K10DPbF  C Col.

Image gallery

IRG7PH50K10D-EPBF Page 1 IRG7PH50K10D-EPBF Page 2 IRG7PH50K10D-EPBF Page 3

TAGS
IRG7PH50K10D-EPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRG7PH50K10DPBF
IRG7PH50U-EP
IRG7PH50UPBF
International Rectifier
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