Datasheet Summary
IRG7PH50K10DPbF IRG7PH50K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 35A
Applications
- Industrial Motor Drive
- UPS
- Solar Inverters
- Welding n-channel
G Gate
C G IRG7PH50K10DPbF C Collector
I RG7PH50K10D‐EPbF E Emitter
Features
Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH50K10DPBF IRG7PH50K10D-EPBF...