IRG7PH42UD1PbF, IRG7PH42UD1-EP Datasheet - International Rectifier

IRG7PH42UD1PbF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH42UD1PbF Features

* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight

IRG7PH42UD1-EP_InternationalRectifier.pdf

IRG7PH42UD1PbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRG7PH42UD1PbF, IRG7PH42UD1-EP. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRG7PH42UD1PbF, IRG7PH42UD1-EP

Manufacturer:

International Rectifier

File Size:

453.45 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRG7PH42UD1PbF, IRG7PH42UD1-EP.
Please refer to the document for exact specifications by model.

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IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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