IRG7PH42UD1-EP datasheet, transistor equivalent, International Rectifier

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Features and benefits

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* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transien.

IRG7PH42UD1PbF IRG7PH42UD1-EP VCES = 1200V I NOMINAL = 30A Features
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TAGS

IRG7PH42UD1-EP

Manufacturer

International Rectifier

Related datasheet

IRG7PH42UD1MPBF