IRF8113GPbF - Power MOSFET

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Features

d by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multipli.

International Rectifier

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Part number	IRF8113GPbF
Manufacturer	International Rectifier
File Size	283.60 KB
Description	Power MOSFET
Datasheet	IRF8113GPbF Datasheet
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Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free l Halogen-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PD - 96251 IRF8113GPbF VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg Typ. :5.

Published: Aug 10, 2015 |