IRF7341QPbF mosfet equivalent, power mosfet.
of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make t.
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual.
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fas.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 209.69KB)