IRF7341GPBF mosfet equivalent, power mosfet.
of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make t.
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual.
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fas.
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