IRF7342 Datasheet | Infineon

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 IRF7342Pb F G Gate D Drain S Source Base part number IRF7342Pb F Package Type SO-8 Standard Pack Form Quantity Tape and Reel Orderable Part Number IRF7342Pb F Absolute Maximum Ratings Symbol Parameter Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ -10V ID @ TA = 70°C IDM Continuous Drain Current, VGS @ -10V Pulsed Drain Current  PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear De rating Factor VGS VGSM Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp < 10µs EAS dv/dt Single Pulse Avalanche Energy (Thermally Limited)  Peak Diode Recovery dv/dt  TJ TSTG Operating Junction and Storage Temperature Range Thermal Resistance Symbol Parameter RJA Junction-to-Ambient...