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IRF6728MTRPBF - Power MOSFET

Download the IRF6728MTRPBF datasheet PDF. This datasheet also covers the IRF6728MPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • 25°C Tj = 150°C Single Pulse 0.0 0.1 1.0 10msec 100 10 TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1 0.01 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 140 120 ID, Drain Current (A) 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 10mA 1.5 1.0 -75 -50 -25 0 25 50 75 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6728MPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6728MPBF Power MOSFET
IRF6720S2TR1PBF Power MOSFET
IRF6720S2TRPBF Power MOSFET
IRF6721SPBF Power MOSFET
IRF6721STRPBF Power MOSFET

Full PDF Text Transcription

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PD - 97568 HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free l IRF6728MPbF IRF6728MTRPbF V R R  Typical values (unless otherwise specified) DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V l Low Profile (<0.7 mm) Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance 28nC 8.7nC 3.1nC 29nC 22nC 1.8V l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters S l Optimized for Sync. FET socket of Sync. Buck Converter G D D l Low Conduction and Switching Losses S l Compatible with existing Surface Mount Techniques  l 100% Rg tested DirectFET ™ ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.
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