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International Rectifier Electronic Components Datasheet

IRF6728MPBF Datasheet

Power MOSFET

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PD - 97568
IRF6728MPbF
IRF6728MTRPbF
HEXFET® Power MOSFET plus Schottky Diode ‚
l RoHS Compliant Containing No Lead and Halogen Free
l Integrated Monolithic Schottky Diode

Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
l Dual Sided Cooling Compatible 
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
28nC 8.7nC 3.1nC 29nC 22nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
S
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
DG
D
S
l 100% Rg tested
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6728MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6728MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
23
18 A
140
180
230 mJ
18 A
10
ID = 23A
8
6
4 TJ = 125°C
2 TJ = 25°C
0
2468
10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0 ID= 18A
10.0
8.0
VDS= 24V
VDS= 15V
VDS= 6V
6.0
4.0
2.0
0.0
0
20 40 60 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
1
9/24/10
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRF6728MPBF Datasheet

Power MOSFET

No Preview Available !

IRF6728MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
61
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
2.7
1.8
2.8
1.8
-4.8
–––
–––
–––
–––
–––
28
6.5
3.1
8.7
9.7
11.8
22
1.3
16
34
19
19
4110
970
340
Typ.
–––
–––
0.7
21
29
Max. Units
Conditions
–––
–––
2.5
3.6
2.35
–––
500
5.0
100
-100
–––
42
V VGS = 0V, ID = 1.0mA
mV/°C Reference to 25°C, ID = 6mA
imΩ VGS = 10V, ID = 23A
iVGS = 4.5V, ID = 18A
V VDS = VGS, ID = 100μA
mV/°C VDS = VGS, ID = 10mA
μA VDS = 24V, VGS = 0V
mA VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 18A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 18A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
Ãi––– VDD = 15V, VGS = 4.5V
––– ns ID = 18A
––– RG = 1.8Ω
––– See Fig. 17
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max. Units
Conditions
23 MOSFET symbol
D
A showing the
180
integral reverse
G
0.75
32
44
p-n junction diode.
S
iV TJ = 25°C, IS = 18A, VGS = 0V
ns TJ = 25°C, IF = 18A
inC di/dt = 300A/μs
Notes:
‡ Pulse width 400μs; duty cycle 2%.
2 www.irf.com
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Part Number IRF6728MPBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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