IRF6714MPbF mosfet equivalent, power mosfet.
0.0V 5.00V 4.50V 4.00V 3.50V 3.25V 3.00V 2.75V
10
2.75V
≤60µs PULSE WIDTH Tj = 150°C
1 0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Chara.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET packag.
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