IRF6711STRPBF mosfet equivalent, power mosfet.
l Output Characteristics
1000 VDS = 15V ≤60µs PULSE WIDTH
Fig 5. Typical Output Characteristics
2.0 ID = 19A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is c.
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