Description
The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- n Diode Forward Voltage
100
Fig11. Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
3.0
80
ID, Drain Current (A)
2.5
60
2.0 ID = 50µA
40
1.5
ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A
20
1.0
0 25 50 75 100 125 150 T C , Case Temperature (°C)
0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
150
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID.
IRF6713SPBF_InternationalRectifier.pdf
