Datasheet Details
| Part number | IRF6714MPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 245.11 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6714MPbF Datasheet
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Description
The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.
Features
- Fig11. MVDaxSi,mDuramin-tSo-aSfoeuOrcepeVroaltatigneg(VA) rea ID, Drain Current (A) EAS , Single Pulse Avalanche Energy (mJ) 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 800 700 600 500 Typical VGS(th) Gate threshold Voltage (V) 3.5 3.0 2.5 2.0 ID = 100µA 1.5 ID = 250µA ID = 1.0mA 1.0 ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Te.