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IRF6713STRPBF - DirectFET TM Power MOSFET

Download the IRF6713STRPBF datasheet PDF (IRF6713SPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for directfet tm power mosfet.

Description

The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • n Diode Forward Voltage 100 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 80 ID, Drain Current (A) 2.5 60 2.0 ID = 50µA 40 1.5 ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A 20 1.0 0 25 50 75 100 125 150 T C , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 150 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6713SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com IRF6713SPbF IRF6713STRPbF Typical values (unless otherwise specified) PD - 96129A DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 2.7nC l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested VDSS Qg tot VGS Qgd 6.3nC RDS(on) Qoss 14nC 25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V Qrr 18nC Vgs(th) 1.9V 21nC SQ MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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