IRF6709S2TRPbF mosfet equivalent, power mosfet.
Source Current (A)
0.1 2.5V
0.01 0.1
≤60µs PULSE WIDTH Tj = 25°C 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 100
VDS = 15V ≤.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is .
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