IRF6706S2TR1PBF datasheet, mosfet equivalent, International Rectifier

Features and benefits

ce Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.5V 1 2.5V 0.1 0.1 1 ≤60µs PULSE WIDTH Tj = 25°C 10 1 100 1000 0.1 1 ≤60µs PULSE WIDTH.

Application

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

Description

The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is.

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