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International Rectifier Electronic Components Datasheet

IRF6709S2TR1PBF Datasheet

Power MOSFET

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l RoHS Compliant and Halogen Free 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
PD - 97328A
IRF6709S2TRPbF
IRF6709S2TR1PbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 5.9m@10V 10.1m@4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
8.1nC 2.8nC 1.1nC 9.3nC 4.6nC 1.8V
Applicable DirectFET Outline and Substrate Outline 
S1 DirectFET™ ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The
reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at
higher frequencies. The IRF6709S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus
converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25 V
±20
12
9.7 A
39
100
51 mJ
10 A
30 14.0
ID = 12A
12.0 ID= 10A
VDS= 20V
20 10.0 VDS= 13V
8.0
10
TJ = 125°C
6.0
4.0
TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20
QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.02mH, RG = 25, IAS = 10A.
1
04/07/09 Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRF6709S2TR1PBF Datasheet

Power MOSFET

No Preview Available !

IRF6709S2TR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
19
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
19
5.9
10.1
1.8
-7.2
–––
–––
–––
–––
–––
8.1
1.9
1.1
2.8
2.3
3.9
4.6
3.2
8.4
25
9.1
9.5
1010
340
140
Typ.
–––
–––
–––
15
9.3
Max. Units
Conditions
–––
–––
7.8
13.5
2.35
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
imVGS = 10V, ID = 12A
iVGS = 4.5V, ID = 10A
V VDS = VGS, ID = 25µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 13V, ID =10A
12
––– VDS = 13V
––– nC VGS = 4.5V
––– ID = 10A
––– See Fig. 18
–––
––– nC VDS = 10V, VGS = 0V
–––
Ãi––– VDD = 13V, VGS = 4.5V
––– ID = 10A
––– ns RG= 6.2
–––
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
26 MOSFET symbol
A showing the
100 integral reverse
p-n junction diode.
i1.0 V TJ = 25°C, IS = 10A, VGS = 0V
i23 ns TJ = 25°C, IF =10A
14 nC di/dt = 200A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
2
www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number IRF6709S2TR1PBF
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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