IRF6678TRPbF datasheet, mosfet equivalent, International Rectifier

Features and benefits

Typical RDS(on) (Normalized) ID, Drain-to-Source Current (Α) 1.0 1 V GS = 10V V GS = 4.5V 0.1 1 2 3 4 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction .

Application

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.

Description

The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package .

Image gallery