IRF6678TRPbF, IRF6678PbF Datasheet - International Rectifier

IRF6678TRPbF DirectFET Power MOSFET

The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l l DirectFET Power MOSFET Typical values (unless otherwise specified) IRF6678PbF IRF6678TRPbF www.DataSheet4U.com PD - 97223 VDSS Qg tot VGS Qgd 15nC RDS(on) Qgs2 4.0nC RDS(on) Qoss 28nC 30V max ±20V max.

IRF6678TRPbF Features

* 40 ID, Drain Current (A) Limited By Package 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Puls

IRF6678PbF_InternationalRectifier.pdf