Datasheet Details
| Part number | IRF6678PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 280.23 KB |
| Description | DirectFET Power MOSFET |
| Datasheet |
 IRF6678PbF Datasheet
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General Description
The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Key Features
- 40 ID, Drain Current (A) Limited By Package 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 800 700 600 500 400 300 200 100 0 25 50 75 ID 8.7A 11A BOTTOM 23A TOP 100 125 150 Starting T J , Junction Temperature (°C) Fig.