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IRF6678TRPbF - DirectFET Power MOSFET

Download the IRF6678TRPbF datasheet PDF (IRF6678PbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for directfet power mosfet.

Description

The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • 40 ID, Drain Current (A) Limited By Package 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 800 700 600 500 400 300 200 100 0 25 50 75 ID 8.7A 11A BOTTOM 23A TOP 100 125 150 Starting T J , Junction Temperature (°C) Fig.

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Note: The manufacturer provides a single datasheet file (IRF6678PbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l l DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) IRF6678PbF IRF6678TRPbF www.DataSheet4U.com PD - 97223 VDSS Qg tot VGS Qgd 15nC RDS(on) Qgs2 4.0nC RDS(on) Qoss 28nC 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Qrr 46nC Vgs(th) 1.8V 43nC MX Applicable DirectFET Outline and Substrate Outline (see p.
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