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IRF6678PbF - DirectFET Power MOSFET

Description

The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • 40 ID, Drain Current (A) Limited By Package 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 800 700 600 500 400 300 200 100 0 25 50 75 ID 8.7A 11A BOTTOM 23A TOP 100 125 150 Starting T J , Junction Temperature (°C) Fig.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6678 Power MOSFET
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Full PDF Text Transcription

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RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l l DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) IRF6678PbF IRF6678TRPbF www.DataSheet4U.com PD - 97223 VDSS Qg tot VGS Qgd 15nC RDS(on) Qgs2 4.0nC RDS(on) Qoss 28nC 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Qrr 46nC Vgs(th) 1.8V 43nC MX Applicable DirectFET Outline and Substrate Outline (see p.
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