IRF6674TRPBF mosfet equivalent, power mosfet.
LSE WIDTH
Tj = 25°C 1 0.1 1 VDS , Drain-to-Source Voltage (V) 10 1 0.1
≤60μs PULSE WIDTH
Tj = 150°C 1 VDS , Drain-to-Source Voltage (V) 10
Fig 4. Typical Output Charact.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET packa.
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