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IRF6637 - DirectFET Power MOSFET

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General Description

The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD - 96968 www.DataSheet4U.com IRF6637 RDS(on) Qoss 9.9nC DirectFET™ Power MOSFET ‚ l l l l l l l l l Lead and Bromide Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.0nC RDS(on) Qgs2 1.0nC 30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V Qrr 20nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 160 Fig 13. Typical Threshold Voltage vs. Junction Temperature.

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