IRF6637 mosfet equivalent, directfet power mosfet.
0µs PULSE WIDTH
Tj = 150°C 10 100
1
Fig 4. Typical Output Characteristics
1000 VDS = 15V
ID, Drain-to-Source Current (Α)
VDS , Drain-to-Source Voltage (V)
VDS , Drain.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package .
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