2.5V 10 2.5V 1 0.1 ≤60µs PULSE WIDTH Tj = 150°C 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Output Characteristics 1.5 ID = 16A VGS = 4.5V VGS .

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET pack.

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