IRF6620PBF mosfet equivalent, power mosfet.
erating Area
120
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
90
ID = 250µA
60
1.5
30
0 25 50 75 100 125 150
1.0 -75 -50 -25 0 25 50 75 100 12.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package.
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