IRF6621TRPbF mosfet equivalent, power mosfet.
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1000 100
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VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
10
1 0.1
2.5V 1
≤60µs PULSE WIDTH Tj = 150°C
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typic.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET pack.
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