IRF6616PBF - Power MOSFET

International Rectifier

IRF6616PBF Datasheet Preview — Preview of IRF6616PBF PDF

Datasheet Details

Part number	IRF6616PBF
Manufacturer	International Rectifier ↗
File Size	300.85 KB
Description	Power MOSFET
Datasheet	IRF6616PBF-InternationalRectifier.pdf

IRF6616PBF Product details

Description

The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile.

Features

e Pulse 0 1 10 100 1000 1.00 1 0.10 VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 120 100 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Junction Temperature ( °C ) Fig.

📁 IRF6616PBF Similar Datasheet

IRF6643TRPbF - DIGITAL AUDIO MOSFET (IRF)
IRF6644PbF - IR MOSFET (Infineon)
IRF6648PbF - Power MOSFET (Infineon)
IRF6648TRPbF - Power MOSFET (Infineon)
IRF6662PbF - Power MOSFET (IRF)
IRF6662TRPbF - Power MOSFET (IRF)
IRF60B217 - N-Channel MOSFET (INCHANGE)
IRF60R217 - N-Channel MOSFET (INCHANGE)

Other Datasheets by International Rectifier

IRF6616 - DirectFET Power MOSFET
IRF6616TRPBF - Power MOSFET
IRF6610 - HEXFET Power MOSFET Silicon Technology
IRF6611 - DirectFET Power MOSFET
IRF6611PbF - DirectFET Power MOSFET
IRF6611TRPbF - DirectFET Power MOSFET

Published: Apr 1, 2014 |