IRF6616PBF mosfet equivalent, power mosfet.
0
≤ 60µs PULSE WIDTH Tj = 150°C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
Fig 5. Ty.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The Direct.
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