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International Rectifier Electronic Components Datasheet

IRF6613PBF Datasheet

Power MOSFET

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l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97087A
IRF6613PbF
IRF6613TRPbF
DirectFET™ Power MOSFET ‚
VDSS
40V
RDS(on) max
3.4m@VGS = 10V
4.1m@VGS = 4.5V
Qg(typ.)
42nC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST
MQ MX MT
MT
DirectFET™ ISOMETRIC
Description
The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for
synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Gate-to-Source Voltage
kContinuous Drain Current, VGS @ 10V
ÃhContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
kPower Dissipation
hPower Dissipation
hPower Dissipation
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
Linear Derating Factor
Max.
40
±20
150
23
18
180
89
2.8
1.8
200
18
0.022
Units
V
A
W
mJ
A
W/°C
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to + 150
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
hlJunction-to-Ambient
ilJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Case
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
1
7/3/06
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRF6613PBF Datasheet

Power MOSFET

No Preview Available !

IRF6613PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
93
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
38
2.6
3.1
–––
-5.8
–––
–––
–––
–––
–––
42
11.5
3.3
12.6
14.6
15.9
22
18
47
27
4.9
5950
990
460
Max. Units
Conditions
–––
–––
3.4
4.1
2.25
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 23A g
VGS = 4.5V, ID = 18A g
V VDS = VGS, ID = 250µA
mV/°C
1.0
150
100
-100
–––
63
µA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 18A
––– VDS = 20V
––– nC VGS = 4.5V
––– ID = 18A
––– See Fig. 6 and 16
–––
––– nC VDS = 16V, VGS = 0V
––– VDD = 16V, VGS = 4.5V g
––– ID = 18A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) e
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
38
42
Max. Units
Conditions
110 MOSFET symbol
D
A showing the
180 integral reverse G
p-n junction diode.
S
1.0 V TJ = 25°C, IS = 18A, VGS = 0V g
57 ns TJ = 25°C, IF = 18A
63 nC di/dt = 100A/µs g
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
„ Starting TJ = 25°C, L = 1.2mH, RG = 25, IAS = 18A.
… Pulse width 400µs; duty cycle 2%.
† Surface mounted on 1 in. square Cu board.
‡ Used double sided cooling, mounting pad.
ˆ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‰ TC measured with thermal couple mounted to top (Drain) of part.
Š Rθ is measured at TJ of approximately 90°C.
2 www.irf.com
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Part Number IRF6613PBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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