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IRF3710ZSPbF Datasheet, International Rectifier

IRF3710ZSPbF mosfet equivalent, hexfet power mosfet.

IRF3710ZSPbF Avg. rating / M : 1.0 rating-12

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IRF3710ZSPbF Datasheet

Features and benefits

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l.

Application

IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ G ID = 59A S TO-220AB D2P.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

Image gallery

IRF3710ZSPbF Page 1

TAGS

IRF3710ZSPbF
HEXFET
Power
MOSFET
International Rectifier

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